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Recent studies have reported worldwide vegetation suppression in response to increasing atmospheric vapor pressure deficit (VPD). Here, we integrate multisource datasets to show that increasing VPD caused by warming alone does not suppress vegetation growth in northern peatlands. A site-level manipulation experiment and a multiple-site synthesis find a neutral impact of rising VPD on vegetation growth; regional analysis manifests a strong declining gradient of VPD suppression impacts from sparsely distributed peatland to densely distributed peatland. The major mechanism adopted by plants in response to rising VPD is the “open” water-use strategy, where stomatal regulation is relaxed to maximize carbon uptake. These unique surface characteristics evolve in the wet soil‒air environment in the northern peatlands. The neutral VPD impacts observed in northern peatlands contrast with the vegetation suppression reported in global nonpeatland areas under rising VPD caused by concurrent warming and decreasing relative humidity, suggesting model improvement for representing VPD impacts in northern peatlands remains necessary.

 

Ultra-wide bandgap (UWBG) semiconductors are promising for many applications, such as power electronics and deep-ultraviolet photonics. In this research, UWBG β-phase magnesium gallium oxide (MgGaO) thin films with a bandgap of 5.1 eV were grown using low-temperature homo-buffer layers in a plasma-assisted molecular beam epitaxy system. The role of the growth temperature and thickness of low-temperature buffer layer on the quality of the active layer was studied using x-ray diffraction and transmission electron microscopy and by analyzing the properties of metal–semiconductor–metal photodetector devices based on these films. It is found that lower buffer growth temperature at 300 °C leads to higher crystal quality of active layer. For the same low buffer growth temperature, different crystal quality in the active layer is attained with different buffer layer thickness. A buffer layer thickness at 40 nm has the best active layer quality with the highest photo current under 265 nm illumination and long decay time as a result of reduced recombination of photo-generated carriers through fewer defects in the active layer. 

Garnet‐type Li₇La₃Zr₂O₁₂(LLZO) solid‐state electrolytes hold great promise for the next‐generation all‐solid‐state batteries. An in‐depth understanding of the phase transformation during synthetic processes is required for better control of the crystallinity and improvement of the ionic conductivity of LLZO. Herein, the phase transformation pathways and the associated surface amorphization are comparatively investigated during the sol–gel and solid‐state syntheses of LLZO using in situ heating transmission electron microscopy (TEM). The combined ex situ X‐ray diffraction and in situ TEM techniques are used to reveal two distinct phase transformation pathways (precursors → La₂Zr₂O₇ → LLZO and precursors → LLZO) and the subsequent layer‐by‐layer crystal growth of LLZO on the atomic scale. It is also demonstrated that the surface amorphization surrounding the LLZO crystals is sensitive to the postsynthesis cooling rate and significantly affects the ionic conductivity of pelletized LLZO. This work brings up a critical but often overlooked issue that may greatly exacerbate the Li‐ion conductivity by undesired synthetic conditions, which can be leveraged to ameliorate the overall crystallinity to improve the electrochemical performance of LLZO. These findings also shed light on the significance of optimizing surface structure to ensure superior performance of Li‐ion conductors.

 

Abstract The abrupt occurrence of twinning when Mg is deformed leads to a highly anisotropic response, making it too unreliable for structural use and too unpredictable for observation. Here, we describe an in-situ transmission electron microscopy experiment on Mg crystals with strategically designed geometries for visualization of a long-proposed but unverified twinning mechanism. Combining with atomistic simulations and topological analysis, we conclude that twin nucleation occurs through a pure-shuffle mechanism that requires prismatic-basal transformations. Also, we verified a crystal geometry dependent twin growth mechanism, that is the early-stage growth associated with instability of plasticity flow, which can be dominated either by slower movement of prismatic-basal boundary steps, or by faster glide-shuffle along the twinning plane. The fundamental understanding of twinning provides a pathway to understand deformation from a scientific standpoint and the microstructure design principles to engineer metals with enhanced behavior from a technological standpoint.